Master degree or above in microelectronics, power electronics, electrical engineering, mechanical electronics or other related majors; More than 8 years of experience in electrical development or technology research and development of power semiconductor packaging; Have successful experience in electrical development of SiC modules, and those who develop products to achieve mass production status are preferred; Familiar with the overall situation of semiconductor packaging industry, and have good interpersonal relationships in industry; Possess a solid theoretical foundation for the microstructure, basic working principles, common failure modes and power electronic circuits of power semiconductor devices such as Si, SiC and GaN; Proficient in electromagnetic fields, circuits, power electronics and basic principles of power devices. Master SiC power module electrical design tools (such as Q3D, Pspice, Siwave, etc.)； Must have excellent negotiation and problem-solving skills. Self-motivated & learning. Proactive and creative. Excellent time management and ability to work under pressure. Self-confidence. Self-motivated and goal driven. Orientation toward results. Good command of English written and oral communication skills， chinese oral langarage preferred. Track industry technology trends, define electrical design technology roadmaps for SiC power modules; Cooperate with team to complete the pre-research of advanced packaging solutions (Electrical design aspect), and organize electrical technical cooperation with universities and research institutes; Responsible for SiC power module electrical design, simulation and verification of power module packaging, and develop advanced electrical design technique with strong competitiveness in the industry; Responsible for solving difficult problems of power modules, such as oscillation, current sharing, system coupling and module reliability; Responsible for the investigation and dynamic tracking of forward-looking technology of power semiconductor packaging(electrical design aspect); Responsible for the development of sic mosfet chip simulation model, complete the simulation and verification of the dynamic characteristics of the chip model; Responsible for power chip selection, complete chip requirement development, chip screening and optimal patch strategy, and finally complete the batch production introduction and verification of new chips.
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